Temperature dependence of annealing on the contact resistance of MoS2with graphene electrodes observed
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FP07/pdf
Reference38 articles.
1. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
2. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
3. MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
4. Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity
5. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
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1. Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation;ACS Omega;2019-10-10
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