Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate-Reference-Cited by-同舟云学术

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

Published:2018-01-12 Issue:2S1 Volume:57 Page:02BB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aikawa Masaki,Onuki Yuya,Hayasaka Natsuki,Nishiyama Tetsuo,Kamada Naoki,Han Xu,Periyanayagam Gandhi Kallarasan,Uchida Kazuki,Sugiyama Hirokazu,Shimomura Kazuhiko

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=2S1/a=02BB04/pdf

Reference34 articles.

1. High-Capacity Optical Transmission Systems

2. On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions

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4. On-Chip Optical Interconnect

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