Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8/a=088002/pdf
Reference31 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. SiC devices: physics and numerical simulation
3. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
4. Silicon carbide high-power devices
5. Status and prospects for SiC power MOSFETs
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1. Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection;IEEE Electron Device Letters;2024-04
2. Characterization of 4.5 kV Charge-Balanced SiC MOSFETs;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14
3. Hydrostatic Calibration of the Piezoresistive Coefficients on 4H Silicon Carbide;2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm);2021-06-01
4. Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors;IEEE Transactions on Electron Devices;2020-04
5. Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance;IEEE Transactions on Electron Devices;2019-11
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