Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process-Reference-Cited by-同舟云学术

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Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

Published:2013-01-01 Issue:1R Volume:52 Page:018001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liao Xiaoyan,Zhuang Yun,Borucki Leonard J.,Cheng Jiang,Theng Siannie,Ashizawa Toranosuke,Philipossian Ara

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference23 articles.

1. Physics of the Coefficient of Friction in CMP

2. Characterization of Pad–Wafer Contact and Surface Topography in Chemical Mechanical Planarization Using Laser Confocal Microscopy

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1. Multi-Scale Insight into Inhibition Mechanism of Benzo Derivatives in Chemical Mechanical Polishing of Copper Film Based on Experiments and Theoretical Calculations;ECS Journal of Solid State Science and Technology;2023-08-01

2. Modeling the microscale contact status in chemical mechanical polishing process;International Journal of Mechanical Sciences;2022-09

3. Investigation of abrasive behavior between pad asperity and oxide thin film in chemical mechanical planarization;Materials Science in Semiconductor Processing;2022-02

4. Effect of Conditioner Type and Downforce, and Pad Surface Micro-Texture on SiO2 Chemical Mechanical Planarization Performance;Micromachines;2019-04-18

5. A Quantitative Analysis of Multi-Scale Response of CMP Pad and Implication to Process Assessments;ECS Journal of Solid State Science and Technology;2019

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