Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel-Reference-Cited by-同舟云学术

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Leakage Current Suppression on Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors by Asymmetrically Deposited Nickel

Published:2013-10-01 Issue:10S Volume:52 Page:10MA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Byun Chang Woo,Son Se Wan,Lee Yong Woo,Park Jae Hyo,Takaloo Ashkan Vakilipour,Joo Seung Ki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Polysilicon TFT technology for active matrix OLED displays

2. Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film

3. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

4. Low‐temperature dopant activation and its application to polycrystalline silicon thin film transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micromachined Room-Temperature Air-Suspended Ni/Cr Nanobolometer;IEEE Transactions on Microwave Theory and Techniques;2015-11

2. A new nanocomposite dielectric ink and its application in printed thin-film transistors;Composites Science and Technology;2014-04

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