Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO2on GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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3. Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications;IEEE Transactions on Nanotechnology;2024
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5. Formation of high-quality SiO2/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO2;Japanese Journal of Applied Physics;2023-05-01
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