Characteristics of Lateral Diffused Metal–Oxide–Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide-Reference-Cited by-同舟云学术

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Characteristics of Lateral Diffused Metal–Oxide–Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide

Published:2013-04-01 Issue:4S Volume:52 Page:04CC07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yan Chin-Rung,Chen Jone F.,Lin Chung-Yi,Hsu Hao-Tang,Liao Yu-Jie,Yang Min-Ti,Chen Chih-Yuan,Lin Yin-Chia,Chen Huei-Haurng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Leakage current degradation in n-MOSFETs due to hot-electron stress

2. Comparison of GIDL in p/sup +/-poly PMOS and n/sup +/-poly PMOS devices

3. An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region;Japanese Journal of Applied Physics;2016-07-07

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