Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D03-Fe3Si Electrode-Reference-Cited by-同舟云学术

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Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D03-Fe3Si Electrode

Published:2013-04-01 Issue:4S Volume:52 Page:04CM02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujita Yuichi,Yamada Shinya,Takemoto Gotaro,Oki Soichiro,Maeda Yuya,Miyao Masanobu,Hamaya Kohei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Creation and Control of Spin Current in Solids

3. Electrical and optical spin injection in ferromagnet/semiconductor heterostructures

4. Silicon spintronics

5. Epitaxial growth of Fe3Si/GaAs(001) hybrid structures

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1. Fabrication and optical characterization of GaN quasi-phase matching crystal by double polarity selective area growth in metal organic vapor phase epitaxy;Functional Materials Letters;2021-10-14

2. Effects of ball milling duration and sintering temperature on mechanical alloying Fe3Si;Journal of Metals, Materials and Minerals;2021-09-28

3. Effects of ball milling duration and sintering temperature on mechanical alloying Fe₃Si;J MET MATER MINER;2021

4. Synthesis of metastable B2-type Fe–Sn alloy epitaxial films and study of their magnetic properties;Japanese Journal of Applied Physics;2018-10-24

5. Epitaxial growth of Sb-doped Ge layers on ferromagnetic Fe3Si for vertical semiconductor spintronic devices;Semiconductor Science and Technology;2018-09-26

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