Effects of Nano- and Microscale SiO2Masks on the Growth ofa-Plane GaN Layers onr-Plane Sapphire-Reference-Cited by-同舟云学术

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Effects of Nano- and Microscale SiO2Masks on the Growth ofa-Plane GaN Layers onr-Plane Sapphire

Published:2013-08-01 Issue:8S Volume:52 Page:08JC04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Son Ji-Su,Miao Cao,Honda Yoshio,Yamaguchi Masahito,Amano Hiroshi,Seo Yong Gon,Hwang Sung-Min,Baik Kwang Hyeon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

3. Spontaneous polarization and piezoelectric constants of III-V nitrides

4. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

5. One-step lateral growth for reduction in defect density ofa-plane GaN onr-sapphire substrate and its application in light emitters

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties evolution of GaN film grown via lateral epitaxial overgrowth;Applied Surface Science;2020-05

2. Electrical characteristics of a -plane low-Mg-doped p-GaN Schottky contacts;physica status solidi (b);2015-03-04

3. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching;Optics Express;2014-02-06

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