A 2.8 µm Pixel-Pitch 55 ke-Full-Well Capacity Global-Shutter Complementary Metal Oxide Semiconductor Image Sensor Using Lateral Overflow Integration Capacitor-Reference-Cited by-同舟云学术

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A 2.8 µm Pixel-Pitch 55 ke-Full-Well Capacity Global-Shutter Complementary Metal Oxide Semiconductor Image Sensor Using Lateral Overflow Integration Capacitor

Published:2013-04-01 Issue:4S Volume:52 Page:04CE01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakai Shin,Tashiro Yoshiaki,Kuroda Rihito,Sugawa Shigetoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference38 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity;Sensors;2023-10-29

2. A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor;IEEE Transactions on Electron Devices;2020-04

3. Image Electronics Information Sensing;The Journal of the Institute of Image Information and Television Engineers;2013

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