Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal–oxide–semiconductor field-effect transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=1/a=015701/pdf
Reference33 articles.
1. Charge pumping in MOS devices
2. A reliable approach to charge-pumping measurements in MOS transistors
3. Determination of interface trap capture cross sections using three-level charge pumping
4. Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
5. Numerical simulation of 3‐level charge pumping
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1. Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors;Applied Physics Letters;2021-06-28
2. Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs;Materials Science Forum;2020-07
3. Charge Pumping Under Spin Resonance in Si(100) Metal-Oxide-Semiconductor Transistors;Physical Review Applied;2019-06-27
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