Random electric field induced by interface roughness in GaN/AlxGa1−xN multiple quantum wells-Reference-Cited by-同舟云学术

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Random electric field induced by interface roughness in GaN/AlxGa1−xN multiple quantum wells

Published:2019-11-21 Issue:12 Volume:12 Page:124005
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yun Joosun,Han Dong-Pyo^ORCID,Hirayama Hideki

Funder

RIKEN

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab548a/pdf

Reference26 articles.

1. Preface

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD

4. Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Light-Extraction Efficiency of Flip-Chip AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes Adopting AlGaN Metasurface;IEEE Photonics Journal;2021-02

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