Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes-Reference-Cited by-同舟云学术

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Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes

Published:2019-03-01 Issue:4 Volume:12 Page:044001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kafar Anna,Stanczyk Szymon,Grzanka Szymon,Pieniak Katarzyna,Suski Tadeusz,Perlin Piotr

Funder

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab0730/pdf

Reference31 articles.

1. Nitride Semiconductor Devices: Principles and Simulation

2. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

5. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

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1. Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode;ECS Journal of Solid State Science and Technology;2024-05-01

2. Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs;Materials;2021-12-29

3. Influence of the a-directed off-cut on the opto-electrical properties of the laser diodes grown on the 0.3° misoriented m-directed GaN substrate;Optical Materials Express;2021-12-28

4. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources;Japanese Journal of Applied Physics;2021-12-15

5. Single-Port Superluminescent-Diode Gain-Chip for Tunable Single-Wavelength and Dual-Wavelength Blue-Laser;IEEE Photonics Journal;2021-02

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