Ideal half-filled intermediate band position in CuGaS2 generated by Sb-related defect complex: a first-principles study-Reference-Cited by-同舟云学术

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Ideal half-filled intermediate band position in CuGaS2 generated by Sb-related defect complex: a first-principles study

Published:2019-01-18 Issue:2 Volume:12 Page:021002
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Huang Dan,Xue Yang,Zhou Wentong,Jiang Jingwen,Ning Hua,Guo Jin,Zhao Yu-Jun,Chen Rongzhen,Persson Clas

Funder

Norges Forskningsråd

Innovation-Driven Development Foundation of Guangxi Province

National Natural Science Foundation of China

Hundred-Talent Program in Guangxi Province

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/aafa0d/pdf

Reference33 articles.

1. Photovoltaic materials: Present efficiencies and future challenges

2. Research opportunities to advance solar energy utilization

3. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

4. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

5. Mesoscopic CH3NH3PbI3/TiO2 Heterojunction Solar Cells

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1. First-principle investigation of structural, electronic, and phase stabilities in chalcopyrite semiconductors: insights from Meta-GGA functionals;Journal of Physics: Condensed Matter;2024-01-24

2. Analysis of the Metallic Intermediate Band in Cr-doped AgGaS<sub>2</sub> Semiconductor for the Photovoltaic Application;Key Engineering Materials;2022-05-16

3. Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route;Thin Solid Films;2020-09

4. Theoretical study impurities intermediate band material based on Sn heavily doped ZnO by first principles;Superlattices and Microstructures;2020-09

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