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Design of ultra-high storage density probe memory with patterned Ge2Sb2Te5 layer and continuous capping layer

  • Published:2019-04-03 Issue:5 Volume:12 Page:055002
  • ISSN:1882-0778
  • Container-title:Applied Physics Express
  • language:
  • Short-container-title:Appl. Phys. Express

Author:

Wang Lei,Liu Zhi-Gao,Yang Ci-Hui,Wen Jing,Xiong Bang-Shu

Funder

National Natural Science Foundation of China

Foundation of Jiangxi Education Department

Foundation of Shanghai Aeronautical Innovation

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Testing Algorithms for Hard to Detect Thermal Crosstalk Induced Write Disturb Faults in Phase Change Memories;2024 Design, Automation & Test in Europe Conference & Exhibition (DATE);2024-03-25

2. Extraction of thermal and optical parameters for As–Se–Te thin films according to phase-change pathways;Materials Chemistry and Physics;2022-02

3. Thickness effect on the crystallization characteristic of RF sputtered Sb thin films;Journal of Materials Science: Materials in Electronics;2021-08-27

4. Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition;Journal of Electronic Materials;2020-11-16

5. Improved thermal stability and contact of antimony film by the interlayer HfO2;Journal of Materials Science: Materials in Electronics;2020-04-03
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