Role of surface defects in the efficiency degradation of GaInN-based green LEDs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.7567/1882-0786/ab5bf7/pdf
Reference46 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
5. All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation
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