Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films-Reference-Cited by-同舟云学术

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Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

Published:2019-06-13 Issue:7 Volume:12 Page:073001
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kaneta Shingo,Duc Anh Le,Sriharsha Karumuri,Tanaka Masaaki

Funder

Spintronics Research Network of Japan

Yazaki Memorial Foundation for Science and Technology

CREST of JST

Grants-in-Aid for Scientific Research

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab25c8/pdf

Reference22 articles.

1. Control of ferromagnetism by manipulating the carrier wavefunction in ferromagnetic semiconductor (In,Fe)As quantum wells

2. Modulation of ferromagnetism in(In,Fe)Asquantum wells via electrically controlled deformation of the electron wave functions

3. Ferromagnetic Properties of Mn-Doped III–V Semiconductor Quantum Wells

4. Tunneling between ferromagnetic films

5. Tunneling magnetoresistance of a GaMnAs-based double barrier ferromagnetic tunnel junction

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferromagnetic Fe-doped InAs quantum dots with high Curie temperature;Applied Physics Express;2021-07-19

2. Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$;Scientific Reports;2021-04-07

3. Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature;Applied Physics Letters;2020-08-31

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