Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
2. 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
3. Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
4. Chemomechanical Polishing of Silicon Carbide
5. Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers
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1. A ReaxFF molecular dynamics study on the mechanism of material removal from 4H-SiC substrate in chemical mechanical polishing;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08
2. Plasma-assisted polishing for atomic surface fabrication of single crystal SiC;Acta Physica Sinica;2021
3. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping;Materials;2018-10-18
4. Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide;Applied Physics A;2016-03-10
5. Polymer/CeO2–Fe3O4 multicomponent core–shell particles for high-efficiency magnetic-field-assisted polishing processes;International Journal of Machine Tools and Manufacture;2016-02
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