Accelerated Degradation of High Power Light-Emitting Diode Resulted from Inhomogeneous Current Distribution-Reference-Cited by-同舟云学术

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Accelerated Degradation of High Power Light-Emitting Diode Resulted from Inhomogeneous Current Distribution

Published:2011-03-01 Issue:3R Volume:50 Page:034301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Shih Chun,Lin Pang,Fu Han Kuei,Lee An Tse,Chen Tzung Te,Wang Chien Ping,Huang Sheng Bang,Chou Pei Ting

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Solid-State Light Sources Getting Smart

2. III–Nitride UV Devices

3. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

4. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates

5. Kinetic model for gradual degradation in semiconductor lasers and light‐emitting diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability of nitride LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

2. Reliability of nitride LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2014

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