Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes
2. Light-Emitting Diodes
3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
4. Auger recombination in InGaN measured by photoluminescence
5. On the importance of radiative and Auger losses in GaN-based quantum wells
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1. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer;Micromachines;2019-10-12
2. Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties;Journal of Crystal Growth;2019-01
3. Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy;MRS Advances;2016-12-19
4. Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier;Applied Physics A;2014-04-04
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