Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2012-04-01 Issue:4S Volume:51 Page:04DA05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashida Tetsuro,Endo Kazuhiko,Liu Yongxun,O'uchi Shin-ichi,Matsukawa Takashi,Mizubayashi Wataru,Migita Shinji,Morita Yukinori,Ota Hiroyuki,Hashiguchi Hiroki,Kosemura Daisuke,Kamei Takahiro,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Ogura Atsushi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference37 articles.

1. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP