Very Low Leakage Current of High Band-Gap Al2O3Stacked on TiO2/InP Metal–Oxide–Semiconductor Capacitor with Sulfur and Hydrogen Treatments
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference23 articles.
1. Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate dielectrics
2. Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
3. Electrical Characteristics of Liquid-Phase-Deposited Titanium Oxide Films on (NH[sub 4])[sub 2]S[sub x]-Treated InP Substrate
4. High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric
5. Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
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