Switching Properties of Titanium Dioxide Nanowire Memristor-Reference-Cited by-同舟云学术

Switching Properties of Titanium Dioxide Nanowire Memristor

Published:2012-11-01 Issue:11S Volume:51 Page:11PE09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nagashima Kazuki,Yanagida Takeshi,Kanai Masaki,Oka Keisuke,Klamchuen Annop,Rahong Sakon,Meng Gang,Horprathum Mati,Xu Bo,Zhuge Fuwei,He Yong,Kawai Tomoji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference66 articles.

1. Direct Observation of Vapor−Liquid−Solid Nanowire Growth

2. Rational Growth of Branched and Hyperbranched Nanowire Structures

3. Synthesis of High Density, Size-Controlled Si Nanowire Arrays via Porous Anodic Alumina Mask

4. Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires

5. The missing memristor found

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