Mechanism of Growth of Cr2O3Thin Films on (11̄02), (112̄0), and (0001) Surfaces of Sapphire Substrates by Direct Current–Radio Frequency Magnetron Sputtering-Reference-Cited by-同舟云学术

Mechanism of Growth of Cr2O3Thin Films on (11̄02), (112̄0), and (0001) Surfaces of Sapphire Substrates by Direct Current–Radio Frequency Magnetron Sputtering

Published:2012-11-01 Issue:11S Volume:51 Page:11PG12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwata Nobuyuki,Kuroda Takuji,Yamamoto Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference36 articles.

1. Current-Induced Switching of Domains in Magnetic Multilayer Devices

2. Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching

3. The emergence of spin electronics in data storage

4. Reversible electric control of exchange bias in a multiferroic field-effect device

5. Electric-Field Control of Magnetism in Complex Oxide Thin Films

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