Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress-Reference-Cited by-同舟云学术

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Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

Published:2012-11-01 Issue:11R Volume:51 Page:111202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Kwang-Soo,Han Chang-Hoon,Lee Jun-Ki,Kim Dong-Soo,Kim Hyong-Joon,Shin Joong-Shik,Lee Hea-Beoum,Choi Byoung-Deog

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Hot-electron emission in n-channel IGFETs

2. Emission probability of hot electrons from silicon into silicon dioxide

3. Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI's

4. Hot-electron injection into the oxide in n-channel MOS devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proton migration in bulk orthorhombic barium cerate using density functional theory;Solid State Ionics;2014-06

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