Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application-Reference-Cited by-同舟云学术

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Experimental Study of Floating-Gate-Type Metal–Oxide–Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

Published:2012-06-01 Issue:6S Volume:51 Page:06FF01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Guo Ruofeng,Kamei Takahiro,Matsukawa Takashi,Endo Kazuhiko,O'uchi Shinichi,Tsukada Junichi,Yamauchi Hiromi,Ishikawa Yuki,Hayashida Tetsuro,Sakamoto Kunihiro,Ogura Atsushi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2. Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

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