Quantitative In-depth Profile of Passivated Oxide Layers of GaAs by AES-SIMS–a Comparison of Thermal, Anodic and Plasma Oxidations

Author:

Watanabe Kuniaki,Hashiba Masao,Yamashina Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Auger-Elektronen-Mikroanalyse Grundlagen und Anwendungen;Angewandte Oberflächenanalyse mit SIMS Sekundär-Ionen-Massenspektrometrie AES Auger-Elektronen-Spektrometrie XPS Röntgen-Photoelektronen-Spektrometrie;1986

2. Quantitative Auger analysis by depth profiling of line shapes: Application to native oxide-InSb interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1985-07

3. Sputter Depth Profiling of Microelectronic Structures;Journal of The Electrochemical Society;1983-05-01

4. Interpretation of apparent chemical shifts in XP spectra from oxide—GaP interfaces;Journal of Electron Spectroscopy and Related Phenomena;1983-01

5. Interface Composition Studies of Thermally Oxidized GaAs Using Auger Depth Profiling;Journal of The Electrochemical Society;1982-04-01

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