High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=4/a=040304/pdf
Reference24 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. A new crystallization technique of Si films on glass substrate using thermal plasma jet
3. Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique
4. Liquid Phase Deposition of Carbon Nitride Films for Application as Low-kInsulating Materials
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model;Japanese Journal of Applied Physics;2024-01-01
2. Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications;IEEE Transactions on Electron Devices;2022-08
3. Numerical study on the evaporation process of feedstock powder under transient states in pulse-modulated induction thermal plasmas for nanoparticle synthesis;Journal of Physics D: Applied Physics;2020-06-08
4. Atmospheric pressure plasma jets generated by the DBD in argon-air, helium-air, and helium-water vapour mixtures;Journal of Physics D: Applied Physics;2020-03-03
5. High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation*;Chinese Physics B;2020-03-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3