Growth and characterization of MBE-grown (Bi1− x Sb x )2Se3 topological insulator-Reference-Cited by-同舟云学术

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Growth and characterization of MBE-grown (Bi1− x Sb x )2Se3 topological insulator

Published:2017-06-15 Issue:7 Volume:56 Page:070311
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yuhung,Chong Cheongwei,Chen Weichuan,Huang Jungchun-Andrew,Cheng Chengmaw,Tsuei Kuding,Li Zhongjun,Qiu Huaili,Marchenkov Vyacheslav Viktorovich

Funder

Ministry of Science and Technology, Taiwan

Russian Foundation for Basic Research

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=7/a=070311/pdf

Reference29 articles.

1. Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications

2. Opportunities in chemistry and materials science for topological insulators and their nanostructures

3. Colloquium: Topological insulators

4. The birth of topological insulators

5. Topological insulators and superconductors

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2. Room Temperature Spin-to-Charge Conversion in Amorphous Topological Insulating Gd-Alloyed Bi_xSe_1–x/CoFeB Bilayers;ACS Applied Materials & Interfaces;2023-08-08

3. Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devices;Solar Energy Materials and Solar Cells;2023-03

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