Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application-Reference-Cited by-同舟云学术

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

Published:2017-03-27 Issue:4S Volume:56 Page:04CD19
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Morita Yukinori,Fukuda Koichi,Liu Yongxun,Mori Takahiro,Mizubayashi Wataru,O’uchi Shin-ichi,Fuketa Hiroshi,Otsuka Shintaro,Migita Shinji,Masahara Meishoku,Endo Kazuhiko,Ota Hiroyuki,Matsukawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CD19/pdf

Reference31 articles.

1. Device-circuit interactions in extremely low voltage CMOS designs (invited)

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

4. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

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