Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model-Reference-Cited by-同舟云学术

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Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Published:2017-03-07 Issue:4S Volume:56 Page:04CD09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gupta Chetan,Agarwal Harshit,Lin Y. K.,Ito Akira,Hu Chenming,Chauhan Yogesh Singh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CD09/pdf

Reference41 articles.

1. An 0.18-μm CMOS for mixed digital and analog applications with zero-volt-V/sub th/ epitaxial-channel MOSFETs

2. Native-NMOS-triggered SCR (NANSCR) for ESD protection in 0.13-μm CMOS integrated circuits

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1. Analysis and Modeling of Negative Transconductance in Zero-Threshold Voltage MOSFETs at Cryogenic Temperatures;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs;Solid-State Electronics;2021-08

3. A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility;International Journal of Circuit Theory and Applications;2021-03-09

4. BSIM-BULK: Accurate Compact Model for Analog and RF Circuit Design;2019 IEEE Custom Integrated Circuits Conference (CICC);2019-04

5. Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases;Advanced Electronic Materials;2019-03-28

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