Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=1S/a=01AD06/pdf
Reference36 articles.
1. Structural characterization of pulsed laser-deposited AlN thin films on semiconductor substrates
2. AIN thin film deposition by pulsed laser ablation of Al in NH3
3. Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering
4. Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition
5. Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study
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1. Impact of Pulse Parameters of a DC Power Generator on the Microstructural and Mechanical Properties of Sputtered AlN Film with In-Situ OES Data Analysis;Materials;2023-04-11
2. Aluminum surface nitriding by an atmospheric-pressure non-thermal plasma technique;Japanese Journal of Applied Physics;2022-01-24
3. Well-defined (0001)-oriented aluminum nitride polycrystalline films on amorphous glass substrates deposited by ion plating with direct-current arc discharge;Applied Surface Science;2019-06
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