Serial cosputtering for aluminum doping manipulated zinc oxide as front contact for Cu(In,Ga)Se2 solar cells-Reference-Cited by-同舟云学术

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Serial cosputtering for aluminum doping manipulated zinc oxide as front contact for Cu(In,Ga)Se2 solar cells

Published:2018-07-20 Issue:8S3 Volume:57 Page:08RC18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Körner Stefan,Hartig Manuel,Muydinov Ruslan,Erfurt Darja,Klenk Reiner,Szyszka Bernd,Schlatmann Rutger

Funder

Senatsverwaltung für Bildung, Jugend und Wissenschaft, Berlin

Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=8S3/a=08RC18/pdf

Reference36 articles.

1. Transparent conductors—A status review

2. Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO:B thin films

3. Transparent and conductive aluminum doped zinc oxide films prepared by mid-frequency reactive magnetron sputtering

4. Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Production of CIGS solar cell with an appropriate atomic ratio using magnetron sputtering;Japanese Journal of Applied Physics;2020-07-15

2. Optoelectronic properties of AZO/ZnO bilayer;Journal of Alloys and Compounds;2020-03

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