Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices-Reference-Cited by-同舟云学术

Epitaxial Growth of III–Nitride/Graphene Heterostructures for Electronic Devices

Published:2013-06-01 Issue:6 Volume:6 Page:061003
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Nepal Neeraj,Wheeler Virginia D,Anderson Travis J,Kub Francis J,Mastro Michael A,Myers-Ward Rachael L,Qadri Syed B,Freitas Jaime A,Hernandez Sandra C,Nyakiti Luke O,Walton Scott G,Gaskill Kurt,Jr. Charles R Eddy,

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=6/a=061003/pdf

Reference19 articles.

1. Superconductor-Base Hot-Electron Transistor I. Theory and Design

2. InP Hot Electron Transistors with a Buried Metal Gate

3. Superconductor-Base Hot-Electron Transistor I. Theory and Design

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