Enhanced bonding strength of InP/Si chip-on-wafer by plasma-activated bonding using stress-controlled interlayer-Reference-Cited by-同舟云学术

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Enhanced bonding strength of InP/Si chip-on-wafer by plasma-activated bonding using stress-controlled interlayer

Published:2019-12-09 Issue:SB Volume:59 Page:SBBD02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kikuchi Takehiko,Bai Liu,Mitarai Takuya,Yagi Hideki,Furukawa Masato,Amemiya Tomohiro,Nishiyama Nobuhiko,Arai Shigehisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab4b11/pdf

Reference38 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III–V on Silicon Integrated Optical Devices;Handbook of Radio and Optical Networks Convergence;2024

2. III–V gain region/Si waveguide hybrid lasers by chip-on-wafer hydrophilic bonding process using UV-ozone treatment;Japanese Journal of Applied Physics;2023-11-29

3. High-quality InGaAs films bonded on Si substrate with a thin polycrystalline Si intermediate layer;Applied Surface Science;2023-08

4. Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding;Processes;2021-09-06

5. Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer;Semiconductor Science and Technology;2021-07-27

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