GaN power IC technology on p-GaN gate HEMT platform
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab5b63/pdf
Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit;IEEE Transactions on Power Electronics;2024-02
2. Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch;IEEE Transactions on Electron Devices;2023-11
4. A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors;IEEE Transactions on Electron Devices;2023-10
5. Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier;IEEE Transactions on Electron Devices;2023-07
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