Lateral growth of a twin-free Si stripe longer than 1 mm as a result of rotation suppression
Author:
Funder
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ06/pdf
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1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
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