Improving charge retention in capacitorless DRAM through material and device innovation-Reference-Cited by-同舟云学术

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Improving charge retention in capacitorless DRAM through material and device innovation

Published:2019-02-04 Issue:SB Volume:58 Page:SBBB03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ansari Md. Hasan Raza,Navlakha Nupur,Lin Jyi-Tsong,Kranti Abhinav

Funder

Department of Science and Technology, Ministry of Science and Technology

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBB03/pdf

Reference34 articles.

1. Floating Body Cell

2. InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low power L-shaped gate bipolar impact ionization MOSFET based capacitorless one transistor dynamic random access memory cell;Japanese Journal of Applied Physics;2021-05-28

2. Memristive Non-Volatile Memory Based on Graphene Materials;Micromachines;2020-03-25

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