First-principles calculations of carrier localization in fluctuated InGaN quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCB05/pdf
Reference31 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
3. It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting
4. Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
5. Atom probe tomography of compositional fluctuation in GaInN layers
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