Composition, structure, and semiconducting properties of Mg x Zr2−x N2 thin films-Reference-Cited by-同舟云学术

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Composition, structure, and semiconducting properties of Mg x Zr2−x N2 thin films

Published:2019-05-03 Issue:SC Volume:58 Page:SC1015
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bauers Sage R.,Hamann Danielle M.,Patterson Ashlea,Perkins John D.,Talley Kevin R.,Zakutayev Andriy

Funder

Basic Energy Sciences

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab0f0f/pdf

Reference50 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Design of nitride semiconductors for solar energy conversion

3. Synthesis and Properties of ZnGeN[sub 2]

4. Quasiparticle band structure of Zn-IV-N2compounds

5. Combinatorial insights into doping control and transport properties of zinc tin nitride

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1. Bulk and film synthesis pathways to ternary magnesium tungsten nitrides;Journal of Materials Chemistry C;2023

2. Zinc Titanium Nitride Semiconductor toward Durable Photoelectrochemical Applications;Journal of the American Chemical Society;2022-07-20

3. Role of disorder in the synthesis of metastable zinc zirconium nitrides;Physical Review Materials;2022-04-21

4. Experimental Synthesis of Theoretically Predicted Multivalent Ternary Nitride Materials;Chemistry of Materials;2022-02-01

5. Two-Step Solid-State Synthesis of Ternary Nitride Materials;ACS Materials Letters;2021-11-02

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