Electronic structure of (ZnO)1−x (InN) x alloys calculated by interacting quasi-band theory-Reference-Cited by-同舟云学术

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Electronic structure of (ZnO)1−x (InN) x alloys calculated by interacting quasi-band theory

Published:2019-01-14 Issue:2 Volume:58 Page:021002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furuki Ryota,Oda Masato,Shinozuka Yuzo

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=2/a=021002/pdf

Reference21 articles.

1. Springer Handbook of Condensed Matter and Materials Data

2. Properties of Semiconductor Alloys

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, optical and electrical properties of ZnO–InN quaternary compound films;Thin Solid Films;2023-09

2. Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates;Journal of Materials Research;2022-11-28

3. Sputtering Growth of Metal Oxynitride Semiconductors for Excitonic Devices;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08

4. A model describing the parameters of the semiconductor alloys with a small bowing based on the fusion–repelling behavior;Applied Physics A;2020-04-18

5. Study on the initial growth mechanism of (ZnO)1−x (InN) x using first-principles calculation;Japanese Journal of Applied Physics;2020-02-24

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