Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET-Reference-Cited by-同舟云学术

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Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET

Published:2020-01-16 Issue:2 Volume:59 Page:021001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hosoi Takuji,Azumo Shuji,Kashiwagi Yusaku,Hosaka Shigetoshi,Yamamoto Kenji,Aketa Masatoshi,Asahara Hirokazu,Nakamura Takashi,Kimoto Tsunenobu^ORCID,Shimura Takayoshi,Watanabe Heiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab65a3/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits;Japanese Journal of Applied Physics;2024-08-01

2. Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure;IEEE Transactions on Electron Devices;2023-11

3. Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate;Nanomaterials;2023-05-06

4. Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors;Energies;2023-03-24

5. Multi-Layer High-K Gate Stack Materials for Low D<sub>it</sub> 4H-SiC Based MOSFETs;Materials Science Forum;2022-05-31

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