High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors-Reference-Cited by-同舟云学术

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High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors

Published:2019-05-20 Issue:SC Volume:58 Page:SCCC22
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakata Megumi,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab0f20/pdf

Reference46 articles.

1. Coexistence of WiFi and LiFi toward 5G: concepts, opportunities, and challenges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study between thermal etching and liquid exfoliation of bulk graphitic carbon nitride to nanosheets for the photocatalytic degradation of a model environmental pollutant, Rhodamine B;Journal of Materials Science: Materials in Electronics;2020-11-21

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