Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition-Reference-Cited by-同舟云学术

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Published:2019-05-16 Issue:SD Volume:58 Page:SDDE07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luo Jun-Dao^ORCID,Zhang He-Xin,Wang Zheng-Ying,Gu Siang-Sheng,Yeh Yun-Tien,Chung Hao-Tung,Chuang Kai-Chi^ORCID,Liao Chan-Yu,Li Wei-Shuo,Li Yi-Shao,Li Kai-Shin,Lee Min-Hung,Cheng Huang-Chung

Funder

National Science Council

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab0ded/pdf

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5. Ferroelectric thin films: Review of materials, properties, and applications

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