Origin of the piezoresistance effects in p-type silicon at high temperature
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab3559/pdf
Reference24 articles.
1. Review: Semiconductor Piezoresistance for Microsystems
2. Piezoresistance in p-type silicon revisited
3. Origin of the Linear and Nonlinear Piezoresistance Effects in p-Type Silicon
4. Analysis of piezoresistance in p-type silicon for mechanical sensors
5. Piezoresistance effect inp-type Si
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of hydrogen radical treatment on piezoresistance coefficients of germanium;Applied Physics Express;2023-04-01
2. Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs;IEEE Journal of the Electron Devices Society;2023
3. Design and Experiment of a Hybrid-Integrated Ultrahigh-g Accelerometer With Variable-Section Beam;IEEE Transactions on Instrumentation and Measurement;2023
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