A 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory-Reference-Cited by-同舟云学术

A 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory

Published:2019-03-04 Issue:SB Volume:58 Page:SBBL02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Masahiro^ORCID,Sekine Hiroshi^ORCID,Miki Takafumi,Muto Takashi,Tsuboi Toshiki,Onuki Yusuke,Matsuno Yasushi,Takahashi Hidekazu,Ichikawa Takeshi,Inoue Shunsuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBL02/pdf

Reference32 articles.

1. A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter

2. Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology

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