Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/aafdec/pdf
Reference32 articles.
1. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows
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3. Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor
4. Solution-Processed, High Performance Aluminum Indium Oxide Thin-Film Transistors Fabricated at Low Temperature
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