Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface-Reference-Cited by-同舟云学术

Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface

Published:2019-05-31 Issue:6 Volume:58 Page:060910
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oshima Takayoshi,Kato Yuji,Magome Eisuke,Kobayashi Eiichi,Takahashi Kazutoshi^ORCID

Funder

the Murata Science Foundation

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab219f/pdf

Reference34 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. Photocatalytic performance of combustion-synthesized β and γ-Ga2O3 in the degradation of 1,4-dioxane in aqueous solution

3. Dehydrogenation of propane over spinel-type gallia–alumina solid solution catalysts

4. Room temperature ferromagnetism in Mn-doped γ-Ga2O3 with spinel structure

5. Epitaxial growth of γ-Ga2O3 films by mist chemical vapor deposition

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