Low-temperature formation of GeSn nanodots by Sn mediation-Reference-Cited by-同舟云学术

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Low-temperature formation of GeSn nanodots by Sn mediation

Published:2019-05-29 Issue:SD Volume:58 Page:SDDG09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okamoto Hiroshi,Takita Kensuke,Tsushima Kazuto,Tawara Takehiko,Tateno Kouta,Zhang Guoqiang,Gotoh Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab14d0/pdf

Reference33 articles.

1. GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

2. Low-driving-current temperature-stable 10 Gbit∕s operation of p-doped 1.3 [micro sign]m quantum dot lasers between 20 and 90°C

3. Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

4. Indistinguishable photons from a single-photon device

5. Single-Photon Generation in the 1.55-µm Optical-Fiber Band from an InAs/InP Quantum Dot

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge_1−xSn _x nanodots crystal nuclei for solid phase crystallization of poly-Si_1−x−yGe _x Sn _y;Japanese Journal of Applied Physics;2022-12-02

2. Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template;Japanese Journal of Applied Physics;2022-06-17

3. Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires;ACS Photonics;2022-03-04

4. Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence;Applied Surface Science;2022-03

5. Progress on Germanium–Tin Nanoscale Alloys;Chemistry of Materials;2020-04-24

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