Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs-Reference-Cited by-同舟云学术

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Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs

Published:2019-05-14 Issue:SC Volume:58 Page:SCCC12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kyoung Kim Tae,Uk Cho Moon,Bong So Jae,Min Lee Jae,Kyu Oh Seung,Cha Yu-Jung,Jang Taehoon,Cho Jaehee,Kwak Joon Seop

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SCCC12/pdf

Reference30 articles.

1. Design and analysis of a high-intensity LED lighting module for underwater illumination

2. High-speed underwater optical wireless communication using a blue GaN-based micro-LED

3. A review on light-emitting diode based automotive headlamps

4. Light-Emitting Diodes (LEDs) in Dermatology

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor;ACS Photonics;2024-01-26

2. 32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication;Nanomaterials;2021-11-12

3. Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges;Advanced Photonics Research;2021-09-23

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